The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.
Radiation effects, Si3N4 MIS capacitor, Interface states, Series resistance
Birincil Dil | İngilizce |
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Bölüm | Articles |
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Yayımlanma Tarihi | 20 Haziran 2015 |
Yayınlandığı Sayı | Yıl 2015, Cilt 2, Sayı 2 |
Bibtex | @ { ankujns22825, journal = {Journal of Nuclear Sciences}, issn = {2147-7736}, eissn = {2148-3981}, address = {}, publisher = {Ankara Üniversitesi}, year = {2015}, volume = {2}, number = {2}, pages = {48 - 52}, doi = {10.1501/nuclear\_0000000012}, title = {Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors}, key = {cite}, author = {Kaya, Ş. and Yılmaz, E. and Çetinkaya, A.} } |
APA | Kaya, Ş. , Yılmaz, E. & Çetinkaya, A. (2015). Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors . Journal of Nuclear Sciences , 2 (2) , 48-52 . DOI: 10.1501/nuclear_0000000012 |
MLA | Kaya, Ş. , Yılmaz, E. , Çetinkaya, A. "Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors" . Journal of Nuclear Sciences 2 (2015 ): 48-52 <http://jns.ankara.edu.tr/tr/pub/issue/1884/22825> |
Chicago | Kaya, Ş. , Yılmaz, E. , Çetinkaya, A. "Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors". Journal of Nuclear Sciences 2 (2015 ): 48-52 |
RIS | TY - JOUR T1 - Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors AU - Ş. Kaya , E. Yılmaz , A. Çetinkaya Y1 - 2015 PY - 2015 N1 - doi: 10.1501/nuclear_0000000012 DO - 10.1501/nuclear_0000000012 T2 - Journal of Nuclear Sciences JF - Journal JO - JOR SP - 48 EP - 52 VL - 2 IS - 2 SN - 2147-7736-2148-3981 M3 - doi: 10.1501/nuclear_0000000012 UR - https://doi.org/10.1501/nuclear_0000000012 Y2 - 2022 ER - |
EndNote | %0 Journal of Nuclear Sciences Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors %A Ş. Kaya , E. Yılmaz , A. Çetinkaya %T Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors %D 2015 %J Journal of Nuclear Sciences %P 2147-7736-2148-3981 %V 2 %N 2 %R doi: 10.1501/nuclear_0000000012 %U 10.1501/nuclear_0000000012 |
ISNAD | Kaya, Ş. , Yılmaz, E. , Çetinkaya, A. . "Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors". Journal of Nuclear Sciences 2 / 2 (Haziran 2015): 48-52 . https://doi.org/10.1501/nuclear_0000000012 |
AMA | Kaya Ş. , Yılmaz E. , Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015; 2(2): 48-52. |
Vancouver | Kaya Ş. , Yılmaz E. , Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015; 2(2): 48-52. |
IEEE | Ş. Kaya , E. Yılmaz ve A. Çetinkaya , "Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors", Journal of Nuclear Sciences, c. 2, sayı. 2, ss. 48-52, Haz. 2015, doi:10.1501/nuclear_0000000012 |