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Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Yıl 2015, Cilt 2, Sayı 2, 48 - 52, 20.06.2015
https://doi.org/10.1501/nuclear_0000000012

Öz

The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.

Kaynakça

  • S. Zeyrek, A. Turan, M.M. Bulbul, "The C-V and G/omega-V Electrical Characteristics of Co-60 gamma-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures", Chinese Phys Lett, 30 (2013).
  • H. Uslu, M. Yildirim, S. Altindal, P. Durmus, "The effect of gamma irradiation on electrical and dielectric properties of organic-based chottky
  • barrier diodes (SBDs) at room temperature", Radiat. Phys. Chem., 81 362-369 (2012).
  • H.L. Hughes, J.M. Benedetto, "Radiation effects and hardening of MOS technology: Devices and circuits", IEEE T Nucl Sci, 50 500-521 (2003).
  • K. Watanabe, M. Kato, T. Okabe, M. Nagata, "Radiation Effects of Double-Layer Dielectric Films", IEEE T Nucl Sci, 33 1216-1222 (1986).
  • M.M. Bulbul, S. Zeyrek, S. Altindal, H. Yuzer, "On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes", Microelectron Eng, 83 577-581 (2006).
  • X.J. Liu, J.J. Zhang, X.W. Sun, Y.B. Pan, L.P. Huang, C.Y. Jin, "Growth and properties of silicon nitride films prepared by low pressure chemical
  • vapor deposition using trichlorosilane and ammonia", Thin Solid Films, 460 72-77 (2004).
  • T.P. Ma, P.V. Dressendorfer, "Ionizing Radiation Effects in MOS Devices and Circuits", Wiley & Sons, (1989).
  • F.B. Ergin, R. Turan, S.T. Shishiyanu, E. Yilmaz, "Effect of gamma-radiation on HfO2 based MOS capacitor", Nucl Instrum Meth B, 268 1482-
  • (2010).
  • E. Tugay, E. Yilmaz, R. Turan, "Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors", J Vac Sci Technol A, 30 (2012).
  • V. Singh, N. Shashank, S.K. Sharma, R.S. Shekhawat, D. Kumar, R.K. Nahar, "Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li3+ ions irradiation", Nucl Instrum Meth B, 269 2765-2770 (2011).
  • N. Tugluoglu, "Co-60 gamma-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111)
  • substrates", Nucl Instrum Meth B, 254 118-124 (2007).
  • E.H. Nicollian, J.R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology", Wiley & Sons, (2003).
  • P. Chattopadhyay, A.N. Daw, "On the Current Transport Mechanism in a Metal-Insulator Semiconductor (MIS) Diode", Solid State Electron,
  • 555-560 (1986).
  • A. Tataroglu, S. Altindal, "Gamma-ray irradiation effects on the interface states of MIS structures", Sensor Actuat a-Phys, 151 168-172
  • (2009).
  • S. Kaya, A. Aktag, E. Yilmaz, "Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS
  • capacitors", Nucl Instrum Meth B, 319 44-47 (2014).
  • S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, "Frequency dependent electrical characteristics of BiFeO3 MOS capacitors", J Alloy
  • Compd, 583 476-480 (2014).
  • W.A. Hill, C.C. Coleman, "A Single- Frequency Approximation for Interface-State Density Determination", Solid State Electron, 23 987-993 (1980).
  • A. Tataroglu, S. Altindal, "Characterization of interface states at Au/SnO2/n-Si (MOS) structures", Vacuum, 82 1203-1207 (2008).
  • A. Kinoshita, M. Iwami, K. Kobayashi, I. Nakano, R. Tanaka, T. Kamiya, A. Ohi, T. Ohshima, Y. Fukushima, "Radiation effect on pn-SiC diode as a detector", Nucl Instrum Meth A, 541 213-220 (2005).

Yıl 2015, Cilt 2, Sayı 2, 48 - 52, 20.06.2015
https://doi.org/10.1501/nuclear_0000000012

Öz

Kaynakça

  • S. Zeyrek, A. Turan, M.M. Bulbul, "The C-V and G/omega-V Electrical Characteristics of Co-60 gamma-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures", Chinese Phys Lett, 30 (2013).
  • H. Uslu, M. Yildirim, S. Altindal, P. Durmus, "The effect of gamma irradiation on electrical and dielectric properties of organic-based chottky
  • barrier diodes (SBDs) at room temperature", Radiat. Phys. Chem., 81 362-369 (2012).
  • H.L. Hughes, J.M. Benedetto, "Radiation effects and hardening of MOS technology: Devices and circuits", IEEE T Nucl Sci, 50 500-521 (2003).
  • K. Watanabe, M. Kato, T. Okabe, M. Nagata, "Radiation Effects of Double-Layer Dielectric Films", IEEE T Nucl Sci, 33 1216-1222 (1986).
  • M.M. Bulbul, S. Zeyrek, S. Altindal, H. Yuzer, "On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes", Microelectron Eng, 83 577-581 (2006).
  • X.J. Liu, J.J. Zhang, X.W. Sun, Y.B. Pan, L.P. Huang, C.Y. Jin, "Growth and properties of silicon nitride films prepared by low pressure chemical
  • vapor deposition using trichlorosilane and ammonia", Thin Solid Films, 460 72-77 (2004).
  • T.P. Ma, P.V. Dressendorfer, "Ionizing Radiation Effects in MOS Devices and Circuits", Wiley & Sons, (1989).
  • F.B. Ergin, R. Turan, S.T. Shishiyanu, E. Yilmaz, "Effect of gamma-radiation on HfO2 based MOS capacitor", Nucl Instrum Meth B, 268 1482-
  • (2010).
  • E. Tugay, E. Yilmaz, R. Turan, "Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors", J Vac Sci Technol A, 30 (2012).
  • V. Singh, N. Shashank, S.K. Sharma, R.S. Shekhawat, D. Kumar, R.K. Nahar, "Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li3+ ions irradiation", Nucl Instrum Meth B, 269 2765-2770 (2011).
  • N. Tugluoglu, "Co-60 gamma-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111)
  • substrates", Nucl Instrum Meth B, 254 118-124 (2007).
  • E.H. Nicollian, J.R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology", Wiley & Sons, (2003).
  • P. Chattopadhyay, A.N. Daw, "On the Current Transport Mechanism in a Metal-Insulator Semiconductor (MIS) Diode", Solid State Electron,
  • 555-560 (1986).
  • A. Tataroglu, S. Altindal, "Gamma-ray irradiation effects on the interface states of MIS structures", Sensor Actuat a-Phys, 151 168-172
  • (2009).
  • S. Kaya, A. Aktag, E. Yilmaz, "Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS
  • capacitors", Nucl Instrum Meth B, 319 44-47 (2014).
  • S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, "Frequency dependent electrical characteristics of BiFeO3 MOS capacitors", J Alloy
  • Compd, 583 476-480 (2014).
  • W.A. Hill, C.C. Coleman, "A Single- Frequency Approximation for Interface-State Density Determination", Solid State Electron, 23 987-993 (1980).
  • A. Tataroglu, S. Altindal, "Characterization of interface states at Au/SnO2/n-Si (MOS) structures", Vacuum, 82 1203-1207 (2008).
  • A. Kinoshita, M. Iwami, K. Kobayashi, I. Nakano, R. Tanaka, T. Kamiya, A. Ohi, T. Ohshima, Y. Fukushima, "Radiation effect on pn-SiC diode as a detector", Nucl Instrum Meth A, 541 213-220 (2005).

Ayrıntılar

Birincil Dil İngilizce
Bölüm Articles
Yazarlar

Ş. KAYA
0000-0001-8152-9122


E. YILMAZ


A. ÇETİNKAYA Bu kişi benim

Yayımlanma Tarihi 20 Haziran 2015
Yayınlandığı Sayı Yıl 2015, Cilt 2, Sayı 2

Kaynak Göster

Bibtex @ { ankujns22825, journal = {Journal of Nuclear Sciences}, issn = {2147-7736}, eissn = {2148-3981}, address = {}, publisher = {Ankara Üniversitesi}, year = {2015}, volume = {2}, number = {2}, pages = {48 - 52}, doi = {10.1501/nuclear\_0000000012}, title = {Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors}, key = {cite}, author = {Kaya, Ş. and Yılmaz, E. and Çetinkaya, A.} }
APA Kaya, Ş. , Yılmaz, E. & Çetinkaya, A. (2015). Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors . Journal of Nuclear Sciences , 2 (2) , 48-52 . DOI: 10.1501/nuclear_0000000012
MLA Kaya, Ş. , Yılmaz, E. , Çetinkaya, A. "Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors" . Journal of Nuclear Sciences 2 (2015 ): 48-52 <http://jns.ankara.edu.tr/tr/pub/issue/1884/22825>
Chicago Kaya, Ş. , Yılmaz, E. , Çetinkaya, A. "Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors". Journal of Nuclear Sciences 2 (2015 ): 48-52
RIS TY - JOUR T1 - Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors AU - Ş. Kaya , E. Yılmaz , A. Çetinkaya Y1 - 2015 PY - 2015 N1 - doi: 10.1501/nuclear_0000000012 DO - 10.1501/nuclear_0000000012 T2 - Journal of Nuclear Sciences JF - Journal JO - JOR SP - 48 EP - 52 VL - 2 IS - 2 SN - 2147-7736-2148-3981 M3 - doi: 10.1501/nuclear_0000000012 UR - https://doi.org/10.1501/nuclear_0000000012 Y2 - 2022 ER -
EndNote %0 Journal of Nuclear Sciences Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors %A Ş. Kaya , E. Yılmaz , A. Çetinkaya %T Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors %D 2015 %J Journal of Nuclear Sciences %P 2147-7736-2148-3981 %V 2 %N 2 %R doi: 10.1501/nuclear_0000000012 %U 10.1501/nuclear_0000000012
ISNAD Kaya, Ş. , Yılmaz, E. , Çetinkaya, A. . "Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors". Journal of Nuclear Sciences 2 / 2 (Haziran 2015): 48-52 . https://doi.org/10.1501/nuclear_0000000012
AMA Kaya Ş. , Yılmaz E. , Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015; 2(2): 48-52.
Vancouver Kaya Ş. , Yılmaz E. , Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015; 2(2): 48-52.
IEEE Ş. Kaya , E. Yılmaz ve A. Çetinkaya , "Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors", Journal of Nuclear Sciences, c. 2, sayı. 2, ss. 48-52, Haz. 2015, doi:10.1501/nuclear_0000000012