Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Ş. Kaya; E. Yılmaz; A. Çetinkaya

doi:10.1501/nuclear_0000000012

EN

Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Abstract

The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.

Keywords

Radiation effects, Si3N4 MIS capacitor, Interface states, Series resistance

References

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Details

Primary Language

English

Subjects

-

Journal Section

-

Authors

Ş. Kaya

E. Yılmaz

A. Çetinkaya

Publication Date

June 20, 2015

Submission Date

November 14, 2014

Acceptance Date

-

Published in Issue

Year 1970 Volume: 2 Number: 2

DOI

https://doi.org/10.1501/nuclear_0000000012

IZ

https://izlik.org/JA45HE29TY

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RIS / Bibtex

APA

Kaya, Ş., Yılmaz, E., & Çetinkaya, A. (2015). Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences, 2(2), 48-52. https://doi.org/10.1501/nuclear_0000000012

AMA

1.Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015;2(2):48-52. doi:10.1501/nuclear_0000000012

Chicago

Kaya, Ş., E. Yılmaz, and A. Çetinkaya. 2015. “Influences of Irradiation on the C–V and G ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences 2 (2): 48-52. https://doi.org/10.1501/nuclear_0000000012.

EndNote

Kaya Ş, Yılmaz E, Çetinkaya A (June 1, 2015) Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences 2 2 48–52.

IEEE

[1]Ş. Kaya, E. Yılmaz, and A. Çetinkaya, “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”, Journal of Nuclear Sciences, vol. 2, no. 2, pp. 48–52, June 2015, doi: 10.1501/nuclear_0000000012.

ISNAD

Kaya, Ş. - Yılmaz, E. - Çetinkaya, A. “Influences of Irradiation on the C–V and G ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences 2/2 (June 1, 2015): 48-52. https://doi.org/10.1501/nuclear_0000000012.

JAMA

1.Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015;2:48–52.

MLA

Kaya, Ş., et al. “Influences of Irradiation on the C–V and G ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences, vol. 2, no. 2, June 2015, pp. 48-52, doi:10.1501/nuclear_0000000012.

Vancouver

1.Ş. Kaya, E. Yılmaz, A. Çetinkaya. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015 Jun. 1;2(2):48-52. doi:10.1501/nuclear_0000000012

Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

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