Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Ş. Kaya; E. Yılmaz; A. Çetinkaya

doi:10.1501/nuclear_0000000012

EN

Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Abstract

The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.

Keywords

Radiation effects, Si3N4 MIS capacitor, Interface states, Series resistance

Kaynakça

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Ayrıntılar

Birincil Dil

İngilizce

Konular

-

Bölüm

-

Yazarlar

Ş. Kaya

E. Yılmaz

A. Çetinkaya

Yayımlanma Tarihi

20 Haziran 2015

Gönderilme Tarihi

14 Kasım 2014

Kabul Tarihi

-

Yayımlandığı Sayı

Yıl 1970 Cilt: 2 Sayı: 2

DOI

https://doi.org/10.1501/nuclear_0000000012

IZ

https://izlik.org/JA45HE29TY

Kaynak Göster

RIS / Bibtex

APA

Kaya, Ş., Yılmaz, E., & Çetinkaya, A. (2015). Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences, 2(2), 48-52. https://doi.org/10.1501/nuclear_0000000012

AMA

1.Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015;2(2):48-52. doi:10.1501/nuclear_0000000012

Chicago

Kaya, Ş., E. Yılmaz, ve A. Çetinkaya. 2015. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences 2 (2): 48-52. https://doi.org/10.1501/nuclear_0000000012.

EndNote

Kaya Ş, Yılmaz E, Çetinkaya A (01 Haziran 2015) Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences 2 2 48–52.

IEEE

[1]Ş. Kaya, E. Yılmaz, ve A. Çetinkaya, “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”, Journal of Nuclear Sciences, c. 2, sy 2, ss. 48–52, Haz. 2015, doi: 10.1501/nuclear_0000000012.

ISNAD

Kaya, Ş. - Yılmaz, E. - Çetinkaya, A. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences 2/2 (01 Haziran 2015): 48-52. https://doi.org/10.1501/nuclear_0000000012.

JAMA

1.Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015;2:48–52.

MLA

Kaya, Ş., vd. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences, c. 2, sy 2, Haziran 2015, ss. 48-52, doi:10.1501/nuclear_0000000012.

Vancouver

1.Ş. Kaya, E. Yılmaz, A. Çetinkaya. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 01 Haziran 2015;2(2):48-52. doi:10.1501/nuclear_0000000012

Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Abstract

Keywords

Öz

Kaynakça

Ayrıntılar

Birincil Dil

Konular

Bölüm

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Yayımlandığı Sayı

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