BibTex RIS Kaynak Göster

Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Yıl 2015, Cilt: 2 Sayı: 2, 48 - 52, 20.06.2015

Ş. Kaya , E. Yılmaz , A. Çetinkaya

https://doi.org/10.1501/nuclear_0000000012
https://izlik.org/JA45HE29TY

Öz

The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.

Anahtar Kelimeler

Radiation effects Si3N4 MIS capacitor Interface states Series resistance

Kaynakça

  • S. Zeyrek, A. Turan, M.M. Bulbul, "The C-V and G/omega-V Electrical Characteristics of Co-60 gamma-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures", Chinese Phys Lett, 30 (2013).
  • H. Uslu, M. Yildirim, S. Altindal, P. Durmus, "The effect of gamma irradiation on electrical and dielectric properties of organic-based chottky
  • barrier diodes (SBDs) at room temperature", Radiat. Phys. Chem., 81 362-369 (2012).
  • H.L. Hughes, J.M. Benedetto, "Radiation effects and hardening of MOS technology: Devices and circuits", IEEE T Nucl Sci, 50 500-521 (2003).
  • K. Watanabe, M. Kato, T. Okabe, M. Nagata, "Radiation Effects of Double-Layer Dielectric Films", IEEE T Nucl Sci, 33 1216-1222 (1986).
  • M.M. Bulbul, S. Zeyrek, S. Altindal, H. Yuzer, "On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes", Microelectron Eng, 83 577-581 (2006).
  • X.J. Liu, J.J. Zhang, X.W. Sun, Y.B. Pan, L.P. Huang, C.Y. Jin, "Growth and properties of silicon nitride films prepared by low pressure chemical
  • vapor deposition using trichlorosilane and ammonia", Thin Solid Films, 460 72-77 (2004).
  • T.P. Ma, P.V. Dressendorfer, "Ionizing Radiation Effects in MOS Devices and Circuits", Wiley & Sons, (1989).
  • F.B. Ergin, R. Turan, S.T. Shishiyanu, E. Yilmaz, "Effect of gamma-radiation on HfO2 based MOS capacitor", Nucl Instrum Meth B, 268 1482-
  • (2010).
  • E. Tugay, E. Yilmaz, R. Turan, "Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors", J Vac Sci Technol A, 30 (2012).
  • V. Singh, N. Shashank, S.K. Sharma, R.S. Shekhawat, D. Kumar, R.K. Nahar, "Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li3+ ions irradiation", Nucl Instrum Meth B, 269 2765-2770 (2011).
  • N. Tugluoglu, "Co-60 gamma-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111)
  • substrates", Nucl Instrum Meth B, 254 118-124 (2007).
  • E.H. Nicollian, J.R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology", Wiley & Sons, (2003).
  • P. Chattopadhyay, A.N. Daw, "On the Current Transport Mechanism in a Metal-Insulator Semiconductor (MIS) Diode", Solid State Electron,
  • 555-560 (1986).
  • A. Tataroglu, S. Altindal, "Gamma-ray irradiation effects on the interface states of MIS structures", Sensor Actuat a-Phys, 151 168-172
  • (2009).
  • S. Kaya, A. Aktag, E. Yilmaz, "Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS
  • capacitors", Nucl Instrum Meth B, 319 44-47 (2014).
  • S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, "Frequency dependent electrical characteristics of BiFeO3 MOS capacitors", J Alloy
  • Compd, 583 476-480 (2014).
  • W.A. Hill, C.C. Coleman, "A Single- Frequency Approximation for Interface-State Density Determination", Solid State Electron, 23 987-993 (1980).
  • A. Tataroglu, S. Altindal, "Characterization of interface states at Au/SnO2/n-Si (MOS) structures", Vacuum, 82 1203-1207 (2008).
  • A. Kinoshita, M. Iwami, K. Kobayashi, I. Nakano, R. Tanaka, T. Kamiya, A. Ohi, T. Ohshima, Y. Fukushima, "Radiation effect on pn-SiC diode as a detector", Nucl Instrum Meth A, 541 213-220 (2005).

Yıl 2015, Cilt: 2 Sayı: 2, 48 - 52, 20.06.2015

Ş. Kaya , E. Yılmaz , A. Çetinkaya

https://doi.org/10.1501/nuclear_0000000012
https://izlik.org/JA45HE29TY

Öz

Kaynakça

  • S. Zeyrek, A. Turan, M.M. Bulbul, "The C-V and G/omega-V Electrical Characteristics of Co-60 gamma-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures", Chinese Phys Lett, 30 (2013).
  • H. Uslu, M. Yildirim, S. Altindal, P. Durmus, "The effect of gamma irradiation on electrical and dielectric properties of organic-based chottky
  • barrier diodes (SBDs) at room temperature", Radiat. Phys. Chem., 81 362-369 (2012).
  • H.L. Hughes, J.M. Benedetto, "Radiation effects and hardening of MOS technology: Devices and circuits", IEEE T Nucl Sci, 50 500-521 (2003).
  • K. Watanabe, M. Kato, T. Okabe, M. Nagata, "Radiation Effects of Double-Layer Dielectric Films", IEEE T Nucl Sci, 33 1216-1222 (1986).
  • M.M. Bulbul, S. Zeyrek, S. Altindal, H. Yuzer, "On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes", Microelectron Eng, 83 577-581 (2006).
  • X.J. Liu, J.J. Zhang, X.W. Sun, Y.B. Pan, L.P. Huang, C.Y. Jin, "Growth and properties of silicon nitride films prepared by low pressure chemical
  • vapor deposition using trichlorosilane and ammonia", Thin Solid Films, 460 72-77 (2004).
  • T.P. Ma, P.V. Dressendorfer, "Ionizing Radiation Effects in MOS Devices and Circuits", Wiley & Sons, (1989).
  • F.B. Ergin, R. Turan, S.T. Shishiyanu, E. Yilmaz, "Effect of gamma-radiation on HfO2 based MOS capacitor", Nucl Instrum Meth B, 268 1482-
  • (2010).
  • E. Tugay, E. Yilmaz, R. Turan, "Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors", J Vac Sci Technol A, 30 (2012).
  • V. Singh, N. Shashank, S.K. Sharma, R.S. Shekhawat, D. Kumar, R.K. Nahar, "Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li3+ ions irradiation", Nucl Instrum Meth B, 269 2765-2770 (2011).
  • N. Tugluoglu, "Co-60 gamma-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111)
  • substrates", Nucl Instrum Meth B, 254 118-124 (2007).
  • E.H. Nicollian, J.R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology", Wiley & Sons, (2003).
  • P. Chattopadhyay, A.N. Daw, "On the Current Transport Mechanism in a Metal-Insulator Semiconductor (MIS) Diode", Solid State Electron,
  • 555-560 (1986).
  • A. Tataroglu, S. Altindal, "Gamma-ray irradiation effects on the interface states of MIS structures", Sensor Actuat a-Phys, 151 168-172
  • (2009).
  • S. Kaya, A. Aktag, E. Yilmaz, "Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS
  • capacitors", Nucl Instrum Meth B, 319 44-47 (2014).
  • S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, "Frequency dependent electrical characteristics of BiFeO3 MOS capacitors", J Alloy
  • Compd, 583 476-480 (2014).
  • W.A. Hill, C.C. Coleman, "A Single- Frequency Approximation for Interface-State Density Determination", Solid State Electron, 23 987-993 (1980).
  • A. Tataroglu, S. Altindal, "Characterization of interface states at Au/SnO2/n-Si (MOS) structures", Vacuum, 82 1203-1207 (2008).
  • A. Kinoshita, M. Iwami, K. Kobayashi, I. Nakano, R. Tanaka, T. Kamiya, A. Ohi, T. Ohshima, Y. Fukushima, "Radiation effect on pn-SiC diode as a detector", Nucl Instrum Meth A, 541 213-220 (2005).
Toplam 27 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Yazarlar

Ş. Kaya

E. Yılmaz

A. Çetinkaya

Gönderilme Tarihi 14 Kasım 2014
Yayımlanma Tarihi 20 Haziran 2015
DOI https://doi.org/10.1501/nuclear_0000000012
IZ https://izlik.org/JA45HE29TY
Yayımlandığı Sayı Yıl 2015 Cilt: 2 Sayı: 2

Kaynak Göster

APA Kaya, Ş., Yılmaz, E., & Çetinkaya, A. (2015). Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences, 2(2), 48-52. https://doi.org/10.1501/nuclear_0000000012
AMA 1.Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015;2(2):48-52. doi:10.1501/nuclear_0000000012
Chicago Kaya, Ş., E. Yılmaz, ve A. Çetinkaya. 2015. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences 2 (2): 48-52. https://doi.org/10.1501/nuclear_0000000012.
EndNote Kaya Ş, Yılmaz E, Çetinkaya A (01 Haziran 2015) Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences 2 2 48–52.
IEEE [1]Ş. Kaya, E. Yılmaz, ve A. Çetinkaya, “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”, Journal of Nuclear Sciences, c. 2, sy 2, ss. 48–52, Haz. 2015, doi: 10.1501/nuclear_0000000012.
ISNAD Kaya, Ş. - Yılmaz, E. - Çetinkaya, A. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences 2/2 (01 Haziran 2015): 48-52. https://doi.org/10.1501/nuclear_0000000012.
JAMA 1.Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015;2:48–52.
MLA Kaya, Ş., vd. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences, c. 2, sy 2, Haziran 2015, ss. 48-52, doi:10.1501/nuclear_0000000012.
Vancouver 1.Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences [Internet]. 01 Haziran 2015;2(2):48-52. Erişim adresi: https://izlik.org/JA45HE29TY