The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.
S. Zeyrek, A. Turan, M.M. Bulbul, "The C-V and G/omega-V Electrical Characteristics of Co-60 gamma-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures", Chinese Phys Lett, 30 (2013).
H. Uslu, M. Yildirim, S. Altindal, P. Durmus, "The effect of gamma irradiation on electrical and dielectric properties of organic-based chottky
H.L. Hughes, J.M. Benedetto, "Radiation effects and hardening of MOS technology: Devices and circuits", IEEE T Nucl Sci, 50 500-521 (2003).
K. Watanabe, M. Kato, T. Okabe, M. Nagata, "Radiation Effects of Double-Layer Dielectric Films", IEEE T Nucl Sci, 33 1216-1222 (1986).
M.M. Bulbul, S. Zeyrek, S. Altindal, H. Yuzer, "On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes", Microelectron Eng, 83 577-581 (2006).
X.J. Liu, J.J. Zhang, X.W. Sun, Y.B. Pan, L.P. Huang, C.Y. Jin, "Growth and properties of silicon nitride films prepared by low pressure chemical
vapor deposition using trichlorosilane and ammonia", Thin Solid Films, 460 72-77 (2004).
T.P. Ma, P.V. Dressendorfer, "Ionizing Radiation Effects in MOS Devices and Circuits", Wiley & Sons, (1989).
F.B. Ergin, R. Turan, S.T. Shishiyanu, E. Yilmaz, "Effect of gamma-radiation on HfO2 based MOS capacitor", Nucl Instrum Meth B, 268 1482-
(2010).
E. Tugay, E. Yilmaz, R. Turan, "Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors", J Vac Sci Technol A, 30 (2012).
V. Singh, N. Shashank, S.K. Sharma, R.S. Shekhawat, D. Kumar, R.K. Nahar, "Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li3+ ions irradiation", Nucl Instrum Meth B, 269 2765-2770 (2011).
N. Tugluoglu, "Co-60 gamma-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111)
S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, "Frequency dependent electrical characteristics of BiFeO3 MOS capacitors", J Alloy
Compd, 583 476-480 (2014).
W.A. Hill, C.C. Coleman, "A Single- Frequency Approximation for Interface-State Density Determination", Solid State Electron, 23 987-993 (1980).
A. Tataroglu, S. Altindal, "Characterization of interface states at Au/SnO2/n-Si (MOS) structures", Vacuum, 82 1203-1207 (2008).
A. Kinoshita, M. Iwami, K. Kobayashi, I. Nakano, R. Tanaka, T. Kamiya, A. Ohi, T. Ohshima, Y. Fukushima, "Radiation effect on pn-SiC diode as a detector", Nucl Instrum Meth A, 541 213-220 (2005).
Year 2015,
Volume: 2 Issue: 2, 48 - 52, 20.06.2015
S. Zeyrek, A. Turan, M.M. Bulbul, "The C-V and G/omega-V Electrical Characteristics of Co-60 gamma-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures", Chinese Phys Lett, 30 (2013).
H. Uslu, M. Yildirim, S. Altindal, P. Durmus, "The effect of gamma irradiation on electrical and dielectric properties of organic-based chottky
H.L. Hughes, J.M. Benedetto, "Radiation effects and hardening of MOS technology: Devices and circuits", IEEE T Nucl Sci, 50 500-521 (2003).
K. Watanabe, M. Kato, T. Okabe, M. Nagata, "Radiation Effects of Double-Layer Dielectric Films", IEEE T Nucl Sci, 33 1216-1222 (1986).
M.M. Bulbul, S. Zeyrek, S. Altindal, H. Yuzer, "On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes", Microelectron Eng, 83 577-581 (2006).
X.J. Liu, J.J. Zhang, X.W. Sun, Y.B. Pan, L.P. Huang, C.Y. Jin, "Growth and properties of silicon nitride films prepared by low pressure chemical
vapor deposition using trichlorosilane and ammonia", Thin Solid Films, 460 72-77 (2004).
T.P. Ma, P.V. Dressendorfer, "Ionizing Radiation Effects in MOS Devices and Circuits", Wiley & Sons, (1989).
F.B. Ergin, R. Turan, S.T. Shishiyanu, E. Yilmaz, "Effect of gamma-radiation on HfO2 based MOS capacitor", Nucl Instrum Meth B, 268 1482-
(2010).
E. Tugay, E. Yilmaz, R. Turan, "Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors", J Vac Sci Technol A, 30 (2012).
V. Singh, N. Shashank, S.K. Sharma, R.S. Shekhawat, D. Kumar, R.K. Nahar, "Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li3+ ions irradiation", Nucl Instrum Meth B, 269 2765-2770 (2011).
N. Tugluoglu, "Co-60 gamma-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111)
S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, "Frequency dependent electrical characteristics of BiFeO3 MOS capacitors", J Alloy
Compd, 583 476-480 (2014).
W.A. Hill, C.C. Coleman, "A Single- Frequency Approximation for Interface-State Density Determination", Solid State Electron, 23 987-993 (1980).
A. Tataroglu, S. Altindal, "Characterization of interface states at Au/SnO2/n-Si (MOS) structures", Vacuum, 82 1203-1207 (2008).
A. Kinoshita, M. Iwami, K. Kobayashi, I. Nakano, R. Tanaka, T. Kamiya, A. Ohi, T. Ohshima, Y. Fukushima, "Radiation effect on pn-SiC diode as a detector", Nucl Instrum Meth A, 541 213-220 (2005).
Kaya, Ş., Yılmaz, E., & Çetinkaya, A. (2015). Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences, 2(2), 48-52. https://doi.org/10.1501/nuclear_0000000012
AMA
Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. June 2015;2(2):48-52. doi:10.1501/nuclear_0000000012
Chicago
Kaya, Ş., E. Yılmaz, and A. Çetinkaya. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences 2, no. 2 (June 2015): 48-52. https://doi.org/10.1501/nuclear_0000000012.
EndNote
Kaya Ş, Yılmaz E, Çetinkaya A (June 1, 2015) Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences 2 2 48–52.
IEEE
Ş. Kaya, E. Yılmaz, and A. Çetinkaya, “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”, Journal of Nuclear Sciences, vol. 2, no. 2, pp. 48–52, 2015, doi: 10.1501/nuclear_0000000012.
ISNAD
Kaya, Ş. et al. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences 2/2 (June 2015), 48-52. https://doi.org/10.1501/nuclear_0000000012.
JAMA
Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015;2:48–52.
MLA
Kaya, Ş. et al. “Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors”. Journal of Nuclear Sciences, vol. 2, no. 2, 2015, pp. 48-52, doi:10.1501/nuclear_0000000012.
Vancouver
Kaya Ş, Yılmaz E, Çetinkaya A. Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors. Journal of Nuclear Sciences. 2015;2(2):48-52.