Research Article
BibTex RIS Cite
Year 2019, Volume: 15 Issue: 2, 139 - 143, 30.06.2019
https://doi.org/10.18466/cbayarfbe.460022

Abstract

References

  • 1. Kahraman, A, Yilmaz, E, Aktag, A, Kaya, S. 2016. Evaluation of Radiation Sensor Aspects of Er2O3 MOS Capacitors under Zero Gate Bias. IEEE Transactions on Nuclear Science; 63(2): 1284–1293.
  • 2. Laha, A, Osten, H.J, Fissel, A. 2007. Influence of Interface Layer Composition on the Electrical Properties of Epitaxial Gd2O3 Thin Films for High-K Application. Applied Physics Letters; 90: 113508-1-3.
  • 3. Kaya, S, Yilmaz, E. 2018. Modifications of Structural, Chemical, and Electrical Characteristics of Er2O3/Si Interface under Co-60 Gamma Irradiation. Nuclear Instruments & Methods in Physics Research B; 418: 74–79.
  • 4. Kitai, S, Maida, O, Kanashima, T, Okuyama, M. 2003. Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition. Japanese Journal of Applied Physics Part 1; 42: 247–253.
  • 5. Pampillon, M.A, Feijoo, P.C, San Andres, E. 2013. High Permittivity Gadolinium Oxide Deposited on Indium Phosphide by High-Pressure Sputtering without Interface Treatments. Microelectronic Engineering; 109: 236–239.
  • 6. Kao, C-H, Chen, H, Pan, Y.T, Chiu, J.S, Luc, T-C. 2012. The Characteristics of the High-K Er2O3 Dielectrics Deposited on Polycrystalline Silicon. Solid State Communications; 152: 504–508.
  • 7. Mao, W, Fujita, M. 2015. Growth of Single-Phase Nanostructured Er2O3 Thin Films on Si (100) by Ion Beam Sputter Deposition. Surface & Coatings Technology; 283: 241–246.
  • 8. Kaya, S, Lok, R, Aktag, A, Seidel, J, Yilmaz, E. 2014. Frequency Dependent Electrical Characteristics of BiFeO3 MOS Capacitors. Journal of Alloys and Compounds; 583: 476–480.
  • 9. Fleetwood, D.M. 1996. Fast and Slow Border Traps in MOS Devices. IEEE Transactions on Nuclear Science; 43: 779–786.
  • 10. Inoue, M, Shimada, A, Shirafuji, J. 1996. Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors. Japanese Journal of Applied Physics Part 1; 35(12A): 5921–5924.
  • 11. Ravotti, F, Glaser, M, Rosenfeld, A.B, Lerch, M.L.E, Holmes-Siedle, A.G, Sarrabayrouse, G. 2007. Response of RadFET Dosimeters to High Fluencies of Fast Neutrons. IEEE Transactions on Nuclear Science; 54: 1170–1177.
  • 12. Kahraman, A, Yilmaz, E, Kaya, S, Aktag, A. 2015. Effects of Post Deposition Annealing, Interface States and Series Resistance on Electrical Characteristics of HfO2 MOS Capacitors. Journal of Materials Science-Materials in Electronics; 26(11): 8277-8284.
  • 13. Xiao, H, Huang, S.H. 2010. Frequency and Voltage Dependency of Interface States and Series Resistance in Al/SiO2/p-Si MOS structure. Materials Science in Semiconductor Processing; 13: 395.
  • 14. Tataroglu, A, Al-Ghamdi, A.A, El-Tantawy, F. 2016. Analysis of Interface States of FeO-Al2O3 Spinel Composite Film/p-Si Diode by Conductance Technique. Applied Physics a Materials Science & Processing; 122(3): 1–6.
  • 15. Cheung, S.K, Cheung, N.W. 1986. Extraction of Schottky Diode Parameters from Forward Current‐Voltage Characteristics. Applied Physics Letters; 49: 85-87.
  • 16. Hill, W.A, Coleman, C.C. 1980. A Single-Frequency Approximation for Interface-State Density Determination. Solid-State Electronics; 23(9): 987–993.
  • 17. Tataroglu, A, Altindal, A, Bulbul, M.M. 2005. Temperature and Frequency Dependent Electrical and Dielectric Properties of Al/SiO2/p-Si (MOS) Structure. Microelectronic Engineering; 81(1): 140–149.
  • 18. Sze, S.M. Physics of Semiconductor Devices; John Wiley and Sons Press: New Jersey, USA, 1981; pp 815.
  • 19. Jaksic, A, Rodgers, K, Gallagher, C, Hughes, P.J. Use of RADFETs for quality assurance of radiation cancer treatments, MIEL 2006-Proceedings, Belgrade, Serbia, 2006, pp 577–579.
  • 20. Kim, M.S, Kim, H.T, Chi, S. 2003. Distribution of Interface States in MOS Systems Extracted by the Subthreshold Current in MOSFETs under Optical Illumination. Journal of Korean Physical Society; 43(5): 873–878.

Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies

Year 2019, Volume: 15 Issue: 2, 139 - 143, 30.06.2019
https://doi.org/10.18466/cbayarfbe.460022

Abstract

Electrical parameters of Erbium Oxide (Er2O3)
MOS capacitors depending on frequency were investigated deeply, in this paper.
Er2O3 layers were deposited on p–Si substrates with (100)
oriented using RF–magnetron sputtering method. The films were annealed at 500 oC
in N2 environment. C–V characteristic changes reduce with increasing
frequency. G/ω–V characteristic variations show different behavior between
10–250 kHz and 250 kHz–1 MHz. It is thought that these different behaviors are
caused by interface states between silicon and Er2O3
layer, series resistance (Rs) effects and the relaxation time of
trapped states. The Rs values calculated by the Cma and Gma
values at the high frequency and decrease with rising frequency. Then, Cc­­–V
and Gc/ω–V characteristic curves were measured and compared to first
measurements. In addition, interface state density (Dit), diffusion
potential (VD), and barrier height (
B) were calculated and these results demonstrate
similar behaviors.

References

  • 1. Kahraman, A, Yilmaz, E, Aktag, A, Kaya, S. 2016. Evaluation of Radiation Sensor Aspects of Er2O3 MOS Capacitors under Zero Gate Bias. IEEE Transactions on Nuclear Science; 63(2): 1284–1293.
  • 2. Laha, A, Osten, H.J, Fissel, A. 2007. Influence of Interface Layer Composition on the Electrical Properties of Epitaxial Gd2O3 Thin Films for High-K Application. Applied Physics Letters; 90: 113508-1-3.
  • 3. Kaya, S, Yilmaz, E. 2018. Modifications of Structural, Chemical, and Electrical Characteristics of Er2O3/Si Interface under Co-60 Gamma Irradiation. Nuclear Instruments & Methods in Physics Research B; 418: 74–79.
  • 4. Kitai, S, Maida, O, Kanashima, T, Okuyama, M. 2003. Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition. Japanese Journal of Applied Physics Part 1; 42: 247–253.
  • 5. Pampillon, M.A, Feijoo, P.C, San Andres, E. 2013. High Permittivity Gadolinium Oxide Deposited on Indium Phosphide by High-Pressure Sputtering without Interface Treatments. Microelectronic Engineering; 109: 236–239.
  • 6. Kao, C-H, Chen, H, Pan, Y.T, Chiu, J.S, Luc, T-C. 2012. The Characteristics of the High-K Er2O3 Dielectrics Deposited on Polycrystalline Silicon. Solid State Communications; 152: 504–508.
  • 7. Mao, W, Fujita, M. 2015. Growth of Single-Phase Nanostructured Er2O3 Thin Films on Si (100) by Ion Beam Sputter Deposition. Surface & Coatings Technology; 283: 241–246.
  • 8. Kaya, S, Lok, R, Aktag, A, Seidel, J, Yilmaz, E. 2014. Frequency Dependent Electrical Characteristics of BiFeO3 MOS Capacitors. Journal of Alloys and Compounds; 583: 476–480.
  • 9. Fleetwood, D.M. 1996. Fast and Slow Border Traps in MOS Devices. IEEE Transactions on Nuclear Science; 43: 779–786.
  • 10. Inoue, M, Shimada, A, Shirafuji, J. 1996. Capture Cross Section of Electric-Stress-Induced Interface States in (100) Si Metal/Oxide/Semiconductor Capacitors. Japanese Journal of Applied Physics Part 1; 35(12A): 5921–5924.
  • 11. Ravotti, F, Glaser, M, Rosenfeld, A.B, Lerch, M.L.E, Holmes-Siedle, A.G, Sarrabayrouse, G. 2007. Response of RadFET Dosimeters to High Fluencies of Fast Neutrons. IEEE Transactions on Nuclear Science; 54: 1170–1177.
  • 12. Kahraman, A, Yilmaz, E, Kaya, S, Aktag, A. 2015. Effects of Post Deposition Annealing, Interface States and Series Resistance on Electrical Characteristics of HfO2 MOS Capacitors. Journal of Materials Science-Materials in Electronics; 26(11): 8277-8284.
  • 13. Xiao, H, Huang, S.H. 2010. Frequency and Voltage Dependency of Interface States and Series Resistance in Al/SiO2/p-Si MOS structure. Materials Science in Semiconductor Processing; 13: 395.
  • 14. Tataroglu, A, Al-Ghamdi, A.A, El-Tantawy, F. 2016. Analysis of Interface States of FeO-Al2O3 Spinel Composite Film/p-Si Diode by Conductance Technique. Applied Physics a Materials Science & Processing; 122(3): 1–6.
  • 15. Cheung, S.K, Cheung, N.W. 1986. Extraction of Schottky Diode Parameters from Forward Current‐Voltage Characteristics. Applied Physics Letters; 49: 85-87.
  • 16. Hill, W.A, Coleman, C.C. 1980. A Single-Frequency Approximation for Interface-State Density Determination. Solid-State Electronics; 23(9): 987–993.
  • 17. Tataroglu, A, Altindal, A, Bulbul, M.M. 2005. Temperature and Frequency Dependent Electrical and Dielectric Properties of Al/SiO2/p-Si (MOS) Structure. Microelectronic Engineering; 81(1): 140–149.
  • 18. Sze, S.M. Physics of Semiconductor Devices; John Wiley and Sons Press: New Jersey, USA, 1981; pp 815.
  • 19. Jaksic, A, Rodgers, K, Gallagher, C, Hughes, P.J. Use of RADFETs for quality assurance of radiation cancer treatments, MIEL 2006-Proceedings, Belgrade, Serbia, 2006, pp 577–579.
  • 20. Kim, M.S, Kim, H.T, Chi, S. 2003. Distribution of Interface States in MOS Systems Extracted by the Subthreshold Current in MOSFETs under Optical Illumination. Journal of Korean Physical Society; 43(5): 873–878.
There are 20 citations in total.

Details

Primary Language English
Subjects Engineering
Journal Section Articles
Authors

Berk Morkoc This is me

Ayşegül Kahraman

Aliekber Aktag

Ercan Yılmaz

Publication Date June 30, 2019
Published in Issue Year 2019 Volume: 15 Issue: 2

Cite

APA Morkoc, B., Kahraman, A., Aktag, A., Yılmaz, E. (2019). Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar University Journal of Science, 15(2), 139-143. https://doi.org/10.18466/cbayarfbe.460022
AMA Morkoc B, Kahraman A, Aktag A, Yılmaz E. Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. CBUJOS. June 2019;15(2):139-143. doi:10.18466/cbayarfbe.460022
Chicago Morkoc, Berk, Ayşegül Kahraman, Aliekber Aktag, and Ercan Yılmaz. “Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies”. Celal Bayar University Journal of Science 15, no. 2 (June 2019): 139-43. https://doi.org/10.18466/cbayarfbe.460022.
EndNote Morkoc B, Kahraman A, Aktag A, Yılmaz E (June 1, 2019) Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. Celal Bayar University Journal of Science 15 2 139–143.
IEEE B. Morkoc, A. Kahraman, A. Aktag, and E. Yılmaz, “Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies”, CBUJOS, vol. 15, no. 2, pp. 139–143, 2019, doi: 10.18466/cbayarfbe.460022.
ISNAD Morkoc, Berk et al. “Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies”. Celal Bayar University Journal of Science 15/2 (June 2019), 139-143. https://doi.org/10.18466/cbayarfbe.460022.
JAMA Morkoc B, Kahraman A, Aktag A, Yılmaz E. Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. CBUJOS. 2019;15:139–143.
MLA Morkoc, Berk et al. “Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies”. Celal Bayar University Journal of Science, vol. 15, no. 2, 2019, pp. 139-43, doi:10.18466/cbayarfbe.460022.
Vancouver Morkoc B, Kahraman A, Aktag A, Yılmaz E. Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies. CBUJOS. 2019;15(2):139-43.