Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Ş. Kaya, E. Yılmaz, A. O. Çetinkaya
1.716 362


The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.


Radiation effects, Si3N4 MIS capacitor, Interface states, Series resistance

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S. Zeyrek, A. Turan, M.M. Bulbul, "The C-V and G/omega-V Electrical Characteristics of Co-60 gamma-Ray Irradiated Al/Si3N4/p-Si (MIS) Structures", Chinese Phys Lett, 30 (2013).

H. Uslu, M. Yildirim, S. Altindal, P. Durmus, "The effect of gamma irradiation on electrical and dielectric properties of organic-based chottky

barrier diodes (SBDs) at room temperature", Radiat. Phys. Chem., 81 362-369 (2012).

H.L. Hughes, J.M. Benedetto, "Radiation effects and hardening of MOS technology: Devices and circuits", IEEE T Nucl Sci, 50 500-521 (2003).

K. Watanabe, M. Kato, T. Okabe, M. Nagata, "Radiation Effects of Double-Layer Dielectric Films", IEEE T Nucl Sci, 33 1216-1222 (1986).

M.M. Bulbul, S. Zeyrek, S. Altindal, H. Yuzer, "On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes", Microelectron Eng, 83 577-581 (2006).

X.J. Liu, J.J. Zhang, X.W. Sun, Y.B. Pan, L.P. Huang, C.Y. Jin, "Growth and properties of silicon nitride films prepared by low pressure chemical

vapor deposition using trichlorosilane and ammonia", Thin Solid Films, 460 72-77 (2004).

T.P. Ma, P.V. Dressendorfer, "Ionizing Radiation Effects in MOS Devices and Circuits", Wiley & Sons, (1989).

F.B. Ergin, R. Turan, S.T. Shishiyanu, E. Yilmaz, "Effect of gamma-radiation on HfO2 based MOS capacitor", Nucl Instrum Meth B, 268 1482-


E. Tugay, E. Yilmaz, R. Turan, "Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors", J Vac Sci Technol A, 30 (2012).

V. Singh, N. Shashank, S.K. Sharma, R.S. Shekhawat, D. Kumar, R.K. Nahar, "Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li3+ ions irradiation", Nucl Instrum Meth B, 269 2765-2770 (2011).

N. Tugluoglu, "Co-60 gamma-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (111)

substrates", Nucl Instrum Meth B, 254 118-124 (2007).

E.H. Nicollian, J.R. Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology", Wiley & Sons, (2003).

P. Chattopadhyay, A.N. Daw, "On the Current Transport Mechanism in a Metal-Insulator Semiconductor (MIS) Diode", Solid State Electron,

555-560 (1986).

A. Tataroglu, S. Altindal, "Gamma-ray irradiation effects on the interface states of MIS structures", Sensor Actuat a-Phys, 151 168-172


S. Kaya, A. Aktag, E. Yilmaz, "Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS

capacitors", Nucl Instrum Meth B, 319 44-47 (2014).

S. Kaya, R. Lok, A. Aktag, J. Seidel, E. Yilmaz, "Frequency dependent electrical characteristics of BiFeO3 MOS capacitors", J Alloy

Compd, 583 476-480 (2014).

W.A. Hill, C.C. Coleman, "A Single- Frequency Approximation for Interface-State Density Determination", Solid State Electron, 23 987-993 (1980).

A. Tataroglu, S. Altindal, "Characterization of interface states at Au/SnO2/n-Si (MOS) structures", Vacuum, 82 1203-1207 (2008).

A. Kinoshita, M. Iwami, K. Kobayashi, I. Nakano, R. Tanaka, T. Kamiya, A. Ohi, T. Ohshima, Y. Fukushima, "Radiation effect on pn-SiC diode as a detector", Nucl Instrum Meth A, 541 213-220 (2005).